Biography of Prof. Dr. J.P. Reithmaier
He studied physics at TU Munich and made his PhD at Siemens and Walter-Schottky-Institute in 1990. Until 1992, he worked as Postdoc at IBM in Rüschlikon, Switzerland on III/V epitaxy. In 1992, he joined University of Würzburg where he built-up a research group working on nanostructured semiconductors and their applications in optoelectronic devices. In 2005 he became a full professor of physics and director of the Institute of Nanostructure Technologies and Analytics at the University of Kassel.
Major expertise and interests
Prof. Reithmaier has more than 25 years of experience in laser physics and optoelectronic devices, more than 20 years in molecular beam epitaxy and more than 15 years in nanostructuring of semiconductor materials. His current interests are focused on nanostructured semiconductors and their optoelectronic applications. This includes self-assembly techniques of III-V quantum dot materials on GaAs, InP and Si substrates as well as nanostructuring of by high-resolution lithographical techniques. New types of devices are investigated like nanolasers, single photon sources, ultra-high speed lasers, high power lasers, light emitting devices on silicon and nanocrystalline diamond for biomedical, quantum computing and quantum communication applications.
(1) J.P. Reithmaier, R. Höger, H. Riechert, A. Heberle, G. Abstreiter, G. Weimann, "Band offset in elastically strained InGaAs/GaAs multiple quantum wells determined by optical absorption and electronic Raman scattering", Appl. Phys. Lett. 56, 536 (1990).
(2) J.P. Reithmaier, R. Höger, H. Riechert, "Experimental evidence for the transition from two- to three-dimensional behaviour of excitons in quantum-well structures", Phys. Rev. B 43, 4933 (1991).
(3) J. Dreybrodt, A. Forchel, J.P. Reithmaier, "Optical properties of GaInAs/GaAs surface quantum wells", Phys. Rev. B 48, 14741 (1993).
(4) J.P. Reithmaier, M. Röhner, H. Zull, F. Schäfer, A. Forchel, "Size Dependence of Confined Optical Modes in Photonic Quantum Dots", Phys. Rev. Lett. 78, 378 (1997).
(5) M. Bayer, T. Gutbrod, A. Forchel, J.P. Reithmaier, T.L. Reinecke, P.A. Knipp, A.A. Dremin, V.D. Kulakovskii, "Optical modes in photonic molecules", Phys. Rev. Lett. 81, 2582 (1998).
(6) M. Bayer, A. Kuther, A. Forchel, A. Gorbunov, V.B. Timofeev, F. Schäfer, J.P. Reithmaier, T.L. Reinecke, S.N. Walck "Electron and hole g-factors and exchange interaction energies from studies of the fine structure in In0.6Ga0.4As quantum dots", Phys. Rev. Lett. 82, 1748 (1999).
(7) M. Kamp, J. Hofmann, A. Forchel, F. Schäfer, J.P. Reithmaier, "Low threshold high quantum efficiency laterally gain coupled InGaAs/AlGaAs distributed feedback lasers", Appl. Phys. Lett. 74, 483 (1999).
(8) S. Rennon, F. Klopf, J.P. Reithmaier, and A. Forchel, "12 µm-long edge-emitting quantum-dot laser", Electron. Lett. 37 (11), pp. 690-691 (2001).
(9) R. Schwertberger, D. Gold, J.P. Reithmaier, and A. Forchel, "Long wavelength InP based quantum dot lasers", IEEE Phot. Technol. Lett. 14 (6), pp. 735-737 (2002).
(10) Ch. Schuller, F. Klopf, J.P. Reithmaier, A. Forchel, "Tunable photonic crystals fabricated in III- V semiconductor slab waveguides using infiltrated liquid crystals", Appl. Phys. Lett. 82 (17), pp. 2767-2769 (2003).
(11) J.P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. Keldysh, V.Kulakovskii, T.L. Reinecke and A. Forchel, " Strong coupling in a quantum dot micropillar cavity system", Nature 432, pp. 197 - 200 (2004).
(12) H. Dery, E. Benisty, A. Epstein, R. Alizon, V. Mikhelashvili, G. Eisenstein, R. Schwertberger, D. Gold, J.P. Reithmaier, A. Forchel, "On the nature of quantum dash structures", J. Appl. Phys. 95 (11), pp. 6103 - 6111 (2004).
(13) J.P. Reithmaier, A. Somers, S. Deubert, R. Schwertberger, W. Kaiser, A. Forchel, M. Calligaro, P. Resneau, O. Parillaud, S. Bansropun, M. Krakowski, R. Alizon, D. Hadass, A. Bilenca, H. Dery, V. Mikhelashvili, G. Eisenstein, M. Gioannini, I. Montrosset, T.W Berg, M. van der Poel, J. Mørk, B. Tromborg, "InP based lasers and optical amplifiers with wire-/dot-like active regions" (invited review paper), J. Phys. D 38, pp. 2088-2102 (2005).
(14) J.P. Reithmaier, G. Eisenstein, A. Forchel, "InAs/InP Quantum Dash Lasers and Amplifiers", Proceedings of the IEEE 95 (9), pp. 1779-1790 (2007, invited).
(15) J.P. Reithmaier, "Strong exciton-photon coupling in semicondcutor quantum dot systems",Semiconductor Science & Technology 23 (12), Art. No 123001 (2008, invited paper).
(16) J.P. Reithmaier, "Nanostructured Semiconductor Materials for Optoelectronic Applications" in Nanostructured Materials for Advanced Technological Applications, edited by J.P. Reithmaier, Plamen Petkov, Wilhelm Kulisch, Cyril Popov, Nato ASI Series B, pp. 447-476, Springer (2009).
(17) E.-M. Pavelescu, C. Gilfert, J. P. Reithmaier, A. Martín-Mínguez, I. Esquivias, “ High-power tunnel-injection 1060-nm InGaAs-(Al)GaAs quantum-dot lasers”, Photonics Technology Letters 21 (14), 999 (2009).
(18) C. Gilfert, E.M. Pavelescu; J.P. Reithmaier, "Influence of the As2/As4 growth modes on the formation of quantum dot like InAs islands grown on InAlGaAs/InP (100)", Appl. Phys. Lett. 96 (19), 191903, (2010).