News

30.03.2010 - 13:31

NATO ASI on Nanotechnological Basis for Advanced Sensors

The NATO Advanced Study Institute on Nanotechnological Basis for Advanced Sensors will be held in Sozopol, Bulgaria, 30 May - 11 June 2010.

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17.07.2009 - 09:07

Introduction to the Issue on Semiconductor Lasers

A new volume of "IEEE Journal of Selected Topics in Quantum Electronics" was published co-edited by Prof. Reithmaier as guest editor.

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27.03.2009 - 13:39

Semiconductor Science and Technology Highlights

Each Year a selection of the absolute best publications in Semiconductor Science and Technology (SST) of the yesteryear is provided for free access by SST until the end of the year. This year a review article by Prof. Reithmaier is included.

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2010

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Journal Papers

  • C. Popov, W. Kulisch, C. Petkov, J.P. Reithmaier, "Ultrananocrystalline diamond/amorphous carbon composite filmsDeposition, characterization and applications", Solid State Phenomena 159, 49-55 (2010).
  • T. Petkova, V. Ilcheva, P. Petkov, G. Socol, C. Ristoscu, F. Sima, C.N. Mihailescu, I.N. Mihailescu, C. Popov, V. Boev, J.P. Reithmaier, "Stress study of thin As-Se-Ag films obtained by vacuum thermal evaporation and pulsed laser deposition", Journal of Optoelectronics and Advanced Materials 12, 650-653 (2010).
  • W. Kulisch, C. Popov, E. Lefterova, S. Bliznakov, J.P. Reithmaier, F. Rossi, "Electrical properties of ultrananocrystalline diamond/amorphous carbon nanocomposite films", Diamond and Related Materials 19, 449-452 (2010).
  • W. Kulisch, C. Popov, D. Gilliland, G. Ceccone, F. Rossi, J.P. Reithmaier, "Investigation of the UV/O3 treatment of ultrananocrystalline diamond films", Surface and Interface Analysis 42, 1152-1155 (2010).
  • C. Gilfert, E.M. Pavelescu, J.P. Reithmaier, "Influence of the As2/As4 growth modes on the formation of quantum dot like InAs islands grown on InAlGaAs/InP (100)", Appl. Phys. Lett. 96 (19), 191903, (2010).
  • M. Syperek, P. Laszczyński, J. Misiewicz, E.M. Pavelesku, C. Gilfert, J.P. Reithmaier, "Time-resolved photoluminescence spectroskopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure", Appl. Phys. Lett. 96, 011901 (2010).
  • T.J. Pfau, A. Gushterov, J.P. Reithmaier, I. Gestier, G. Eisenstein, "High optical quality site-controlled quantum dots", Microelectron. Eng. 887, pp. 1357-1359 (2010).
  • W. Kulisch, C. Popov, T. Sasaki, L. Sirghi, H. Rauscher, F. Rossi, J.P. Reithmaier, "On the development of the morphology of ultrananocrystalline diamond films", Physica Status Solidi A, pp. 1-11 (2010).
  • A. Capua, G. Eisenstein, J.P. Reithmaier, "A nearly instantaneous gain response in quantum dash based optical amplifiers", Appl. Phys. Lett. 97, 131108 (2010).

Conference Contributions

  • H. Koch, W. Kulisch, C. Popov, R. Merz, B. Merz, J.P. Reithmaier, "Plasma amination of ultrananocrystalline diamond/amorphous carbon composite films for the attachment of biomolecules", 4th International Conference on Nano Diamond and New Carbons (NDNC 2010), Suzhou, China (May 2010).
  • H. Koch, W. Kulisch, C. Popov, R. Merz, W. Bock, M. Kopnarski, J.P. Reithmaier, "Surface analytical investigations of plasma animated UNCD films", Symposium on Vacuum Based Science and Technology, Kaiserslautern, Germany (September 2010).
  • L. Ivanova, C. Popov, I. Kolev, B. Shivachev, J. Karadjov, M. Tarassov, W. Kulisch, J.P. Reithmaier, M.D. Apostolova, "Nanocrystalline diamond containing hydrogels and coatings for acceleration of osteogenesis", 4th International Conference on Nano Diamond and New Carbons (NDNC 2010), Suzhou, China (May 2010).
  • J.P. Reithmaier, "High performance lasers realised by advanced nanofabrication technologies", Nanophotonic Symposium at annual meeting of DPG & EPS, Regensburg, Germany (March 2010, invited)
  • J.P. Reithmaier, "High perfomance lasers realized by advanced nanofabrication technologies", International workshop: Exciting semiconductors On the occasion of 20 years anniversary Technische Physik, Julius--Maximilians Universität Würzburg, Germany (April 2010, invited).
  • J.P. Reithmaier, "Nanostructured semiconductor laser diodes for telecom and sensor applications", 2nd Int. Workshop on Nanotechnology Shanghai University - Kassel University, Kassel, Germany (September 2010, invited).
  • J.P. Reithmaier, Lectures on "Nanostructured semiconductor lasers for optical sensor applications", ASI Nato summer school on "Nanotechnological Basis for Advanced Sensors", Sozopol, Bulgaria (June 2010, invited).
  • J.P. Reithmaier, S. Afzal, G. Eisenstein, I. Montrosset, O. Parillaud, M. Krakowski, "Low-Cost High-Speed Lasers Based on Surface Defined Lateral Gratings", Int. Workshop on High Speed Semiconductor Lasers, Wroclaw, Poland (October 2010, invited).
  • A. Martin-Mínguez, H. Oridzola, J.M.G. Tijero, I. Esquivias, E.M. Pavelescu, J.P. Reithmaier, "Bipolar self-consistent optoelectronic model for Quantum Dot Lasers", Photonics West, San Francisco, USA (January 2010).
  • E.M. Pavelescu, C. Gilfert, J.P. Reithmaier, "High-power 1060-nm QD laser with improved T0 by tunneling injection", Photonics West, San Francisco, USA (January, 2010).
  • C. Gilfert, E.M. Pavelescu, J.P. Reithmaier, "Influence of arsenic species of InAs island formation on InAlGaAs/InP (001) surfaces", Quantum Dot Conference, Nottingham, UK (May, 2010).
  • C. Gilfert, E.M. Pavelescu, J.P. Reithmaier, "InAs/InAlGaAs quantum dots formed on InP(100) surfaces as new semiconductor material for future THz emmiters for biomedical sensing", Nanotechnological Basis for Advanced Sensors, Sozopol, Bulgaria (June 2010)
  • W. Rudno-Rudziński, J. Andrzejewski, G. Sęc, M. Syperek, J. Misiewicz, E.M. Pavelescu, C. Gilfert and J.P. Reithmaier, "Tunnel injection structures based on InGaAs/GaAs quantum dots: optical properties and energy structure", Quantum Dot Conference, Nottingham, UK (May, 2010), J. Physics: Conf. Ser., vol. 245, 012047 (2010).
  • T.J. Pfau, A. Gushterov, J.P. Reithmaier, I. Gestier, G. Eisenstein, E. Linder, D. Gershoni, "Reduction of the photoluminescence linewidth of site-controlled InAs quantum dots by a double stack growth technique", Quantum Dot Conference, Nottingham, UK (May, 2010).
  • T.J. Pfau, A. Gushterov, J.P. Reithmaier, "Optimization of wet-chemical pre-pattering for site-controlled quantum dot growth", Int. Workshop on Epitaxial Semicond. on Patterned Substrates & Novel Index Surfaces (EPSP-NIS), Como, Italy (June, 2010).
  • C. Gilfert, E.M. Pavelescu, J.P. Reithmaier, "Arsenic induced shape transition of InAs islands on InAlGaAs/InP (100) surfaces", Int. MBE Conf., Berlin, Germany (August, 2010).
  • V. Zürbig, A. Gushterov, L. Lingys, M. Benyoucef, J.P. Reithmaier, "Molecular beam epitaxy of InAs quantum dots on (100) GaAs substrates formed by droplet epitaxy at elevated substrate temperatures", Int. MBE Conf., Berlin, Germany (August, 2010).
  • T. Al-Zoubi, J.P. Reithmaier, "Growth of III-V quantum dots on silicon substrates: Formation and Characterization", Int. MBE Conf., Berlin, Germany (August, 2010).
  • A. Capua, U. Ben-Ami, G. Eisenstein, J.P. Reithmaier, "Multi-wavelength femtosecond pump-probe characterization of 1550 nm InAs/InP quantum dash optical amplifiers", submitted to Conf. on Lasers and Electro Optics (CLEO), San Jose, USA (June, 2010).
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