2016

Fachzeitschriften

• P. Mrowinski, K. Tarnowski, J. Olszewski, A. Somers, M. Kamp, S. Höfling, J.P. Reithmair, W. Urbanczyk, J. Misewicz, P. Machnikowski, G. Sek, "Effect of Dielectric Medium Anisotropy on the Polarization Degree of Emission from a Single Quantum Dash", Acta Physica Polonica A, vol. 129, no. 1-A, pp. 48-52 (2016). (pdf-Datei)

• S. Gordon, M. Yacob, J.P. Reithmaier, M. Bnyoucef, A. Zrenner, "Coherent photocurrent spectroscopy of single InP-based quantum dots in the telecom band at 1.5 µm", Appl. Phys. B, vol. 122, article 37, pp. 1-7 (2016). (pdf-Datei)

• P. Podemski, M. Pieczarka, A. Marynski, J. Misiewicz, A. Löffler, S. Höfling, J.P. Reithmaier, S. Reitzenstein, G. Sek, "Probing the carrier transfer processes in a self-assembled system with In_0.3Ga_0.7As/GaAs quantum dots by photoluminescence excitation spectroscopy", Superlatt. & Microst. 93, pp. 214-220 (2016). (pdf-Datei)
  

• Ł. Dusanowski, M. Syperek, J. Misiewicz, A. Somers, S. Höfling, M. Kamp, J. P. Reithmaier, and G. Sęk, "Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K", Appl. Phys. Lett. 108, 163108 (2016). (pdf-Datei)

• V.V. Belykh, D.R. Yakovlev, J.J. Schindler, E.A. Zhukov, M.A. Semina, M. Yacob, J.P. Reithmaier, M. Benyoucef, M. Bayer, "Large anisotroy of electron and hole g factors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots", Phys. Rev. B 93, 125302 (2016). (pdf-Datei)

• N. Felgen, B. Naydenov, S. Turner, F. Jelezko, J. P. Reithmaier, C. Popov, "Incorporation and study of SiV centers in diamond nanopillars", Diamond & Rel. Mat. 64, pp. 64-69 (2016). (pdf-Datei)

• A. Voss, H. Wei, Y. Zhang, S. Turner, G. Ceccone, J.P. Reithmaier, M. Stengl, C. Popov, "Strong attachment of circadian pacemaker neurons on modified ultrananocrystalline diamond surfaces", Mat. Sci. & Eng. C 64, pp. 278-285 (2016). (pdf-Datei)

• C. Petkov, P. M. Reintanz, W. Kulisch, A.K. Degenhardt, T. Weidner, J.E. Baio, R. Merz, M. Kopnarski, U. Siemeling, J.P. Reithmaier, C. Popov, "Functionalization of nanocrystalline diamond films with phthalocyanines", Applied Surface Science 379, pp. 415-423 (2016). (pdf-Datei)

Konferenzbeiträge

• J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, A. Becker, A. Rippien, F. Schnabel, B. Bjelica, B. Witzigmann, O. Eyal, G. Eisenstein, "The impact of low-dimensional gain material on emission linewidth and modulation speed in semiconductor lasers", Conf. on Physics of Quantum Electronics (PQE), Snowbird, Utah, USA (invited talk, January 2016). (pptx-File, 8 MB)

• J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, F. Schnabel, V. Sichkovskyi, O. Eyal, G. Eisenstein, "High-speed directly modulated 1.5 μm quantum dot lasers", Photonics-Europe, Brussels, Belgium (invited talk, April 2016). (pdf-file of proceed. paper)
  

• J.P. Reithmaier, M. Benyoucef, "III-V / Si Integration for Photonics", spring meeting of electrochemical society (ECS), San Diego, USA (invited talk, May 2016).

• J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, A. Becker, O. Eyal, G. Eisenstein, "InP-based quantum dot lasers for high-speed optical communication", Compound Semicond. Week (CSW), Toyama, Japan (invited talk, June 2016).

• J.P. Reithmaier, "III-V integration on Si for photonics", IEEE Summer Topicals meeting on Emerging Technology for Integrated Photonics, Newport Beach, CA, USA (invited talk, July 2016).

• J.P. Reithmaier, "Efficient quantum dot based light sources for silicon photonics", ECOC Sunday Workshop on Next Generation Ultra-Broadband Silicon Photonics Based Integrated Circuits, Düsseldorf, Germany (invited talk, September 2016).

• J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, A. Becker, O. Eyal, G. Eisenstein, "1.5 µm quantum dot lasers for high-speed direct modulation and narrow linewidth emission", IEEE Photonics Conf., Waikoloa Village, Hawaii, USA (invited talk, October 2016).

• S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, J.P. Reithmaier, "1.5 µm quantum dot laser material with high temperature stability of threshold current density and external differential efficiency", Photonics West Conf., San Francisco, CA, USA (February, 2016). Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670I (March 7, 2016) (pptx-File, 2 MB) (pdf-File of proceed. paper)

• S. Banyoudeh, A. Abdollahinia, O. Eyal, F. Schnabel, V. Sichkovskyi, G. Eisenstein, J.P. Reithmaier, "High-speed directly modulated 1.5 µm quantum dot lasers", Photonics West Conf., San Francisco, CA, USA (February, 2016). Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670L (March 7, 2016) (pptx-File, 9 MB) (pdf-File of proceed. paper)

• A. Becker, V. Sichkovskyi, M. Bjelica, O. Eyal, P. Baum, A. Rippien, F. Schnabel, B. Witzigmann, G. Eisenstein and J.P. Reithmaier, "Narrow-linewidth 1.5 μm quantum dot distributed feedback lasers", Photonics West Conf., San Francisco, CA, USA (February, 2016). Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670Q (March 7, 2016) (pptx-File, 7 MB) (pdf-File of proceed. paper)

• O. Eyal, G. Eisenstein, S. Banyoudeh, A. Abdollahinia, F. Schnabel and J.P. Reithmaier, "High-Speed InP-Based Quantum Dot Lasers With Low Temperature Sensitivity", Conf. on Lasers & Electro-Optics (CLEO), San José, CA, USA (June, 2016).